Single Event Burnout in a diode, requires a specific set of circumstances to occur, since there is no intrinsic current gain in the device itself to amplify the currents created by the charge from a single event strike. What has to happen for Single Event Burnout (SEB) to occur in a device with no intrinsic gain, for realistic levels of Linear Energy Transfer (LET), for any given bias is fundamentally simple:
The Victory Process cell mode Delaunay 3D device meshing algorithm already includes various TCAD-based local refinement algorithms to ensure accurate and robust device simulation. These include junction and interface distance refinement. One benefit of these approaches is that complex refinement behavior can be specified via a simple deck interface, but a limitation is that the results can only vary according to the small number of parameters of the schemes. In some cases, such as particle path refinement, it can be useful to have finer, more local control over the mesh and the shape distance refinement schemes have been produced to support this.
Q: I have an SEU beam in a 2D structure; the beam track is at an angle through the device. I don’t want to waste mesh by putting a fine mesh everywhere, is there anyway to mesh along the SEU beam track? A: Yes, and it is quite simple to do using DevEdit’s robust feature rich meshing engine.
Calculation of light extraction efficiency or optical output coupling efficiency is often needed in simulating a light emitting device (LED) such as an organic LED (OLED). It is best to perform these calculations without running electrical simulation in the device, as parameters for new materials are hard to obtain and generally unnecessary in calculating light extraction efficiency. Moreover, a pure optical simulation will save simulation time and avoid any potential un-convergence in the electrical simulation.
Yes, TonyPlot has many various display and preference settings that users can adjust, transforming their simulation data into a high quality plot for use in publications.
Silicon carbide is expected to be an excellent device material as high voltage and low-loss power devices. Recently, SBD (Schottky Barrier Diode) and MOSFET based on silicon carbide have been realized [1-3], however, those devices have some problems for its reliability and control of the IV characteristics. The problems are related to defects in the bulk and at the interface of insulator/semiconductor. The concentration (~5e12[/cm3]) of the defects is 2 orders higher than that of silicon [4], and so the defects cause degradation of device characteristics. The investigation of the defect property is important for the improvement of the device performance.
The main cause of operational degradation in MOS devices is believed to be due to the buildup of charge at the Silicon-Oxide interface. This leads to reduced saturation currents and threshold voltage shifts in MOSFET devices. Physics-based models of the degradation process typically consider the breaking of Si-H bonds (depassivation) at the Silicon-Oxide interface to be the main cause of the operational degradation. A new general model of Si-H bond breaking has recently been included in Atlas, adding to the Silvaco TCAD portfolio of degradation models[1].
A new feature that is introduced in Silvaco’s TCAD applications allows the user to run a parallel simulation on a cluster of computers within a network.
A: The 2 basic commands needed to illuminate a structure in Victory Device are BEAM and SOLVE. A single (or multiple) BEAM statement(s) are specified containing the light source properties. The SOLVE statement is used to execute a BEAM at a user-defined optical intensity.
Wide-bandgap semiconductors such as SiC and GaN have attracted much attention because they are expected to break through the material limits of silicon. In particular, AlGaN/GaN HEMTs are generally promising candidates for switching power transistors due to their high electric field strength and the high current density in the transistor channel giving a low on-state resistance.