{"id":29006,"date":"2013-01-01T14:14:59","date_gmt":"2013-01-01T14:14:59","guid":{"rendered":"https:\/\/silvaco-stage.betagentechnologies.com\/uncategorized\/state-of-the-art-3d-sic-process-and-device-simulation\/"},"modified":"2021-07-08T18:20:15","modified_gmt":"2021-07-09T01:20:15","slug":"state-of-the-art-3d-sic-process-and-device-simulation","status":"publish","type":"post","link":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/state-of-the-art-3d-sic-process-and-device-simulation\/","title":{"rendered":"State of the Art 3D SiC Process and Device Simulation"},"content":{"rendered":"<h1>State of the Art 3D SiC Process and Device Simulation<\/h1>\n<h3>Introduction<\/h3>\n<p>Silicon has long been the semiconductor of choice for high-voltage power electronics applications [1,2]. However, wide-bandgap semiconductors such as SiC have begun to attract attention because they are projected to have much better performance than silicon [3-7]. In comparison with silicon, wide-bandgap semiconductors offer a lower intrinsic carrier concentration (10 to 35 orders of magnitude), a higher electric breakdown field (4 to 20 times), a higher thermal conductivity (3 to 13 times), and a faster saturated electron drift velocity (2 to 2.5 times).<\/p>\n<p>SiC exists in over 200 polytypes with different crystal structures with the same stoichiometry. However, only the 6H- and 4H-SiC polytypes are available commercially as both bulk wafers and custom epitaxial layers. Both of these polytypes have a hexagonal crystal structure and a bandgap in the neighborhood of 3eV. Of the two, 4H-SiC is now preferable due to the more isotropic nature of many of its electrical properties.<\/p>\n<p><img loading=\"lazy\" width=\"782\" height=\"1012\" src=\"https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q1_2013_a1.jpg\" class=\"cleaned-enfold-image\" alt=\"\" decoding=\"async\" loading=\"lazy\" srcset=\"https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q1_2013_a1.jpg 782w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q1_2013_a1-232x300.jpg 232w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q1_2013_a1-768x994.jpg 768w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q1_2013_a1-545x705.jpg 545w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q1_2013_a1-29x37.jpg 29w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q1_2013_a1-43x55.jpg 43w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q1_2013_a1-37x48.jpg 37w\" sizes=\"auto, (max-width: 782px) 100vw, 782px\" \/><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Silicon has long been the semiconductor of choice for high-voltage power electronics applications [1,2]. However, wide-bandgap semiconductors such as SiC have begun to attract attention because they are projected to have much better performance than silicon [3-7]. In comparison with silicon, wide-bandgap semiconductors offer a lower intrinsic carrier concentration (10 to 35 orders of magnitude), a higher electric breakdown field (4 to 20 times), a higher thermal conductivity (3 to 13 times), and a faster saturated electron drift velocity (2 to 2.5 times).<\/p>\n","protected":false},"author":5,"featured_media":19856,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[7570],"tags":[],"class_list":["post-29006","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard","entry","has-media"],"_links":{"self":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/posts\/29006","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/users\/5"}],"replies":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/comments?post=29006"}],"version-history":[{"count":1,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/posts\/29006\/revisions"}],"predecessor-version":[{"id":29011,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/posts\/29006\/revisions\/29011"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/media\/19856"}],"wp:attachment":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/media?parent=29006"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/categories?post=29006"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/tags?post=29006"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}