{"id":29174,"date":"2006-05-01T00:02:31","date_gmt":"2006-05-01T00:02:31","guid":{"rendered":"https:\/\/silvaco-stage.betagentechnologies.com\/uncategorized\/comparison-of-3-dimensional-quantum-effects-in-nano-devices-using-the-atlas-3d-bqp-model\/"},"modified":"2021-07-08T18:26:08","modified_gmt":"2021-07-09T01:26:08","slug":"comparison-of-3-dimensional-quantum-effects-in-nano-devices-using-the-atlas-3d-bqp-model","status":"publish","type":"post","link":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/comparison-of-3-dimensional-quantum-effects-in-nano-devices-using-the-atlas-3d-bqp-model\/","title":{"rendered":"Comparison of 3-Dimensional Quantum Effects in Nano Devices Using the Atlas 3D BQP Model"},"content":{"rendered":"<h1>Comparison of 3-Dimensional Quantum Effects in Nano Devices Using the\u00a0<em>ATLAS 3D<\/em>\u00a0BQP Model<\/h1>\n<h3 class=\"feature\">Introduction<\/h3>\n<p>With the MOSFET gate lengths scaling down to sub-20nms many kinds of devices have been proposed and researched such as double-gate, tri-gate, four-gate and gate-all-around (wire) MOSFETs.<\/p>\n<p>In this work, the carrier distribution and capacitance of these 4-types of nano MOSFET were compared using the Bohm Quantum Potential Model [1] in\u00a0<strong><em>ATLAS3D<\/em><\/strong>.<\/p>\n<p><strong>Nanodevice : Geometry and Structure<\/strong><\/p>\n<p>Figure 1, shows the nanodevice structures. (a) is a double-gate MOSFET, (b) is a tri-gate FET, (c) is a four-gate FET, and (d) is a Wire FET. All these structures have a common gate oxide thickness of Tox=1nm, silicon thickness of Tsi=5.6nm (on nanowire the diameter is 5.6nm), gate length of W=5.6nm, and total device length of L=8nm. Also, the doping level used is N<sub>A<\/sub>=1e16 cm<sup>-3<\/sup>\u00a0and N<sub>D<\/sub>=1e20 cm<sup>-3<\/sup>.<\/p>\n<p><strong>Simulation<\/strong><\/p>\n<p>The Bohm Quantum Potential (BQP) model is an expansion of the Wigner equation and calculates the effects of quantum confinement on the electron and hole concentration and C-V curves [1].<\/p>\n<p>As we have 4 different structures, we compared carrier concentration on the center cutplane of the gate as shown in Figure 2.<\/p>\n<p><img loading=\"lazy\" width=\"644\" height=\"800\" src=\"https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_may_2006_a2-e1611193819972.jpg\" class=\"cleaned-enfold-image\" alt=\"\" decoding=\"async\" loading=\"lazy\" \/><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Introduction<\/p>\n<p>With the MOSFET gate lengths scaling down to sub-20nms many kinds of devices have been proposed and researched such as double-gate, tri-gate, four-gate and gate-all-around (wire) MOSFETs.<\/p>\n","protected":false},"author":3,"featured_media":22253,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[7570],"tags":[],"class_list":["post-29174","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard","entry","has-media"],"_links":{"self":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/posts\/29174","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/users\/3"}],"replies":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/comments?post=29174"}],"version-history":[{"count":1,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/posts\/29174\/revisions"}],"predecessor-version":[{"id":29179,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/posts\/29174\/revisions\/29179"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/media\/22253"}],"wp:attachment":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/media?parent=29174"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/categories?post=29174"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/tags?post=29174"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}