{"id":29437,"date":"2002-11-01T23:25:26","date_gmt":"2002-11-01T23:25:26","guid":{"rendered":"https:\/\/silvaco-stage.betagentechnologies.com\/uncategorized\/simulation-of-single-event-effects-in-finfets-using-the-atlas-device-simulator\/"},"modified":"2026-09-14T09:22:52","modified_gmt":"2026-09-14T16:22:52","slug":"simulation-of-single-event-effects-in-finfets-using-the-atlas-device-simulator","status":"publish","type":"post","link":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/simulation-of-single-event-effects-in-finfets-using-the-atlas-device-simulator\/","title":{"rendered":"Simulation of Single-Event Effects in FinFETs Using the ATLAS Device Simulator"},"content":{"rendered":"<h1>Simulation of Single-Event Effects in FinFETs Using the ATLAS Device Simulator<\/h1>\n<h3>Introduction<\/h3>\n<p>A great deal of recent industry attention has focused on the use of non-planar multi-gate device structures in future generation MOS devices that feature channel lengths below about 50 nm [1-3]. The devices are based upon silicon-on-insulator (SOI) substrates, and employ three-dimensional (3D) structures that achieve fully depleted operation with near-ideal, sub-threshold slopes. Like their single-gate planar counterparts, these new SOI devices contain isolated channel regions. The transient charge injection from ionizing radiation events, including so-called &#8220;single events,&#8221; can change the body potential of SOI MOSFETS and initiate transient transistor action [4-5]. This article illustrates the use of ATLAS Device simulations to examine the impact of charge injection in these highly scaled 3D device structures.<\/p>\n<p><img loading=\"lazy\" width=\"1302\" height=\"1669\" src=\"https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_2002_a1.jpg\" class=\"cleaned-enfold-image\" alt=\"\" decoding=\"async\" loading=\"lazy\" srcset=\"https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_2002_a1.jpg 1302w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_2002_a1-234x300.jpg 234w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_2002_a1-804x1030.jpg 804w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_2002_a1-768x984.jpg 768w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_2002_a1-1198x1536.jpg 1198w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_2002_a1-1170x1500.jpg 1170w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_2002_a1-550x705.jpg 550w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_2002_a1-29x37.jpg 29w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_2002_a1-43x55.jpg 43w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_2002_a1-37x48.jpg 37w\" sizes=\"auto, (max-width: 1302px) 100vw, 1302px\" \/><\/p>\n","protected":false},"excerpt":{"rendered":"<p>A great deal of recent industry attention has focused on the use of non-planar multi-gate device structures in future generation MOS devices that feature channel lengths below about 50 nm [1-3]. The devices are based upon silicon-on-insulator (SOI) substrates, and employ three-dimensional (3D) structures that achieve fully depleted operation with near-ideal, sub-threshold slopes. Like their single-gate planar counterparts, these new SOI devices contain isolated channel regions. The transient charge injection from ionizing radiation events, including so-called &#8220;single events,&#8221; can change the body potential of SOI MOSFETS and initiate transient transistor action [4-5]. This article illustrates the use of ATLAS 3D Device simulations to examine the impact of charge injection in these highly scaled 3D device structures.<\/p>\n","protected":false},"author":2,"featured_media":22286,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[7570],"tags":[],"class_list":["post-29437","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard","entry","has-media"],"_links":{"self":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/posts\/29437","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/comments?post=29437"}],"version-history":[{"count":2,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/posts\/29437\/revisions"}],"predecessor-version":[{"id":66834,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/posts\/29437\/revisions\/66834"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/media\/22286"}],"wp:attachment":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/media?parent=29437"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/categories?post=29437"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ja\/wp-json\/wp\/v2\/tags?post=29437"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}