Accelerating Design with the Victory TCAD Suite

The Simulation Standard, Silvaco’s technical journal for semiconductor process and device engineers is beginning its 30th year of publication. The latest issue has just been released and it outlines a complete power device design flow using the Victory suite of TCAD simulation solutions – Victory Process, Victory Mesh, and Victory Device.

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Jivaro 기생성분 추출로 회로 시뮬레이션의 시간 단축 실현

2020년 1월 17일 | 3:00am-3:30am - (한국 시각) Jivaro에 대한 간략한 소개 후, 더 나은 넷리스트 감소를 위해 필요한 기능과 제어 기법을 제시하여 시뮬레이션 흐름을 개선하기 위한 방법론을 살펴봅니다.

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For Next Generation Nanowires, Simulation from Atoms to SPICE

As process nodes continue to shrink, the requirement for additional physics-based simulation is gradually creeping into each stage of the design process. By way of illustration, Technology Computer Aided Design (TCAD) simulations are becoming more atomistic in nature, SPICE models are becoming process aware to take account of localized strain effects, and back or middle end of line (BEOL or MEOL) parasitics are moving from exclusively two-dimensional (2D) rule-based solutions to full 3D structure field solvers for numerous critical sections of the layout.

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How TCAD Can Optimize Power Electronics

The power electronics (PE) market is growing rapidly, driven by the accelerating demand of EV and HEV vehicles. Power devices lend themselves to design and manufacturing innovations at the transistor-level to improve device performance and reduce development and production costs. Silicon-carbide (SiC), gallium-nitride (GaN), and other wide bandgap materials have started to replace silicon in high-voltage power devices.

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