{"id":30828,"date":"2014-10-01T16:13:31","date_gmt":"2014-10-01T16:13:31","guid":{"rendered":"https:\/\/silvaco-stage.betagentechnologies.com\/%eb%b6%84%eb%a5%98%eb%90%98%ec%a7%80-%ec%95%8a%ec%9d%8c\/radiation-induced-current-leakage-between-two-n-mosfets\/"},"modified":"2021-07-16T21:40:21","modified_gmt":"2021-07-17T04:40:21","slug":"radiation-induced-current-leakage-between-two-n-mosfets","status":"publish","type":"post","link":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/radiation-induced-current-leakage-between-two-n-mosfets\/","title":{"rendered":"Radiation-Induced Current Leakage Between Two n-MOSFET\u2019s"},"content":{"rendered":"<h1 align=\"left\">Radiation-Induced Current Leakage Between Two n-MOSFET\u2019s<\/h1>\n<p><strong>Introduction<\/strong><\/p>\n<p>The Simulation Standard article \u201cSimulating Radiation-Induced Shifts in MOSFET Threshold Voltage\u201d1 gives a brief overview of the ways that ionizing radiation can affect semiconductor devices, and considers insulator charging in particular. In the Victory Device User\u2019s Manual2 there is a more extensive discussion of radiation effects. Here we look at how insulator charging due to ionizing radiation can induce a leakage current between two MOSFET\u2019s separated by a trench.<\/p>\n<p><strong>Simulation<\/strong><\/p>\n<p>To demonstrate how exposure to high-energy radiation can lead to a breakdown of the isolation between separate devices, we shall use Victory Device to simulate a pair of n-MOSFET\u2019s, separated by a trench, that are bombarded by x-rays. The structure and doping of these MOSFET\u2019s are shown in Figure 1.<\/p>\n<p><img loading=\"lazy\" width=\"782\" height=\"1012\" src=\"https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2014_a2.jpg\" class=\"cleaned-enfold-image\" alt=\"\" decoding=\"async\" loading=\"lazy\" srcset=\"https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2014_a2.jpg 782w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2014_a2-232x300.jpg 232w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2014_a2-768x994.jpg 768w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2014_a2-545x705.jpg 545w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2014_a2-29x37.jpg 29w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2014_a2-43x55.jpg 43w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2014_a2-37x48.jpg 37w\" sizes=\"auto, (max-width: 782px) 100vw, 782px\" \/><\/p>\n","protected":false},"excerpt":{"rendered":"<p>The Simulation Standard article \u201cSimulating Radiation-Induced Shifts in MOSFET Threshold Voltage\u201d1 gives a brief overview of the ways that ionizing radiation can affect semiconductor devices, and considers insulator charging in particular. In the Victory Device User\u2019s Manual2 there is a more extensive discussion of radiation effects. Here we look at how insulator charging due to ionizing radiation can induce a leakage current between two MOSFET\u2019s separated by a trench.<\/p>\n","protected":false},"author":5,"featured_media":19563,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[7486],"tags":[],"class_list":["post-30828","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard-ko","entry","has-media"],"_links":{"self":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/posts\/30828","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/users\/5"}],"replies":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/comments?post=30828"}],"version-history":[{"count":1,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/posts\/30828\/revisions"}],"predecessor-version":[{"id":30833,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/posts\/30828\/revisions\/30833"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/media\/19563"}],"wp:attachment":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/media?parent=30828"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/categories?post=30828"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/tags?post=30828"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}