{"id":31036,"date":"2006-08-01T00:02:55","date_gmt":"2006-08-01T00:02:55","guid":{"rendered":"https:\/\/silvaco-stage.betagentechnologies.com\/%eb%b6%84%eb%a5%98%eb%90%98%ec%a7%80-%ec%95%8a%ec%9d%8c\/atlas-device-simulation-of-amorphous-oxide-semiconductor-thin-film-transistors\/"},"modified":"2021-07-16T21:48:11","modified_gmt":"2021-07-17T04:48:11","slug":"atlas-device-simulation-of-amorphous-oxide-semiconductor-thin-film-transistors","status":"publish","type":"post","link":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/atlas-device-simulation-of-amorphous-oxide-semiconductor-thin-film-transistors\/","title":{"rendered":"Atlas Device Simulation of Amorphous Oxide Semiconductor Thin-Film Transistors"},"content":{"rendered":"

Atlas Device Simulation of Amorphous Oxide Semiconductor Thin-Film Transistors<\/h1>\n

1. Introduction<\/h3>\n

Amorphous oxide semiconductor materials have attracted much attention as key components of TFTs for flexible electronics [1]. The advantages of such materials include flexibility and transparency which are compatible with plastic substrates, and higher mobilities than those of amorphous-Si and organic semiconductor TFT materials.<\/p>\n

In this paper, the operation of an amorphous oxide semiconductor TFT was analyzed by the two-dimensional numerical simulator\u00a0ATLAS<\/em><\/strong>\u00a0to verify the applicability of standard drift-diffusion models to an amorphous oxide semiconductor material.<\/p>\n

2. The Device Structure and Models<\/h3>\n

An amorphous oxide semiconductor TFT fabricated and reported by Nomura et al. [2] was simulated and resultant ID-VD and ID-VG curves were compared with measured data.<\/p>\n

The device structure reported is shown in Figure 1. Top gate structure was adopted. Amorphous In-Ga-ZnO (a-IGZO) channel layer was fabricated on a polyethylene terephthalate (PET) sheet. A high-k dielectric Y2<\/sub>O3<\/sub>\u00a0material for gate insulator and transparent indium-tin oxide (ITO) material for the source, drain and gate electrodes were deposited. The channel length and width are 50 \u00b5m and 200 \u00b5m respectively.<\/p>\n

In order to grasp the fundamentals needed to describe a-IGZO TFT electrical behavior, models which are as simple as possible were selected and their parameters were calibrated as follows:<\/p>\n

For all the ITO electrodes, Schottky contact model with work function of 4.6 eV were chosen. For the a-IGZO material, an acceptor type density of states model with no doping, constant electron mobility model of 8.0 cm2<\/sup>\/(Vsec), and band-to-band tunneling model were assumed.<\/p>\n

Figure 2 shows the energy distribution of acceptor type density of states used. Unlike amorphous-Si or many organic materials, slope of tail state is quite gentle and peak density of states is located not at band edges but around mid-gap.<\/p>\n

\"\"<\/p>\n","protected":false},"excerpt":{"rendered":"

1. Introduction<\/p>\n

Amorphous oxide semiconductor materials have attracted much attention as key components of TFTs for flexible electronics [1]. The advantages of such materials include flexibility and transparency which are compatible with plastic substrates, and higher mobilities than those of amorphous-Si and organic semiconductor TFT materials.<\/p>\n","protected":false},"author":3,"featured_media":21651,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[7486],"tags":[],"class_list":["post-31036","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard-ko","entry","has-media"],"_links":{"self":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/posts\/31036","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/users\/3"}],"replies":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/comments?post=31036"}],"version-history":[{"count":1,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/posts\/31036\/revisions"}],"predecessor-version":[{"id":31041,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/posts\/31036\/revisions\/31041"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/media\/21651"}],"wp:attachment":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/media?parent=31036"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/categories?post=31036"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/ko\/wp-json\/wp\/v2\/tags?post=31036"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}