{"id":35860,"date":"2019-10-25T16:13:23","date_gmt":"2019-10-25T16:13:23","guid":{"rendered":"https:\/\/silvaco-stage.betagentechnologies.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/how-tcad-can-optimize-power-electronics\/"},"modified":"2019-10-25T16:13:23","modified_gmt":"2019-10-25T16:13:23","slug":"how-tcad-can-optimize-power-electronics","status":"publish","type":"post","link":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/how-tcad-can-optimize-power-electronics\/","title":{"rendered":"How TCAD Can Optimize Power Electronics"},"content":{"rendered":"<h1>How TCAD Can Optimize Power Electronics<\/h1>\n<p style=\"box-sizing: border-box; margin: 0px 0px 20px; line-height: 24px; letter-spacing: normal; color: #0a0a0a; font-family: 'Open Sans', sans-serif; font-size: 14px; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400; orphans: 2; text-align: left; text-indent: 0px; text-transform: none; white-space: normal; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; background-color: #ffffff; text-decoration-style: initial; text-decoration-color: initial;\">The power electronics (PE) market is growing rapidly, driven by the accelerating demand of EV and HEV vehicles. Power devices lend themselves to design and manufacturing innovations at the transistor-level to improve device performance and reduce development and production costs. Silicon-carbide (SiC), gallium-nitride (GaN), and other wide bandgap materials have started to replace silicon in high-voltage power devices. Anyone designing and\/or manufacturing silicon, SiC, or GaN technologies for the power device market, should use TCAD simulations as part of their R&amp;D efforts, to understand their devices in greater detail and improve their key Figures of Merit. Silvaco TCAD is a market leader in simulation for power devices and its products have been used by foundries and fabless semiconductor companies, worldwide, for over 25 years.<\/p>\n<p style=\"box-sizing: border-box; margin: 0px 0px 20px; line-height: 24px; letter-spacing: normal; color: #0a0a0a; font-family: 'Open Sans', sans-serif; font-size: 14px; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400; orphans: 2; text-align: left; text-indent: 0px; text-transform: none; white-space: normal; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; background-color: #ffffff; text-decoration-style: initial; text-decoration-color: initial;\">TCAD modeling of power technologies allows device engineers to make virtual changes in operating conditions, the device technology i.e. planar versus trench-based structure, or in semiconductor technology such as doping and layer thicknesses. This exploration builds qualitative then quantitative understanding of devices. Iterative simulation then allows engineers to optimize device performance and operating area.<\/p>\n<figure id=\"attachment_8499\" aria-describedby=\"caption-attachment-8499\" style=\"width: 300px\" class=\"wp-caption aligncenter\"><img fetchpriority=\"high\" decoding=\"async\" class=\"wp-image-8499 size-medium\" src=\"\/wp-content\/uploads\/2020\/04\/blog7-300x243.png\" alt=\"\" width=\"300\" height=\"243\" srcset=\"https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/04\/blog7-300x243.png 300w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/04\/blog7-43x35.png 43w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/04\/blog7-63x51.png 63w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/04\/blog7-48x39.png 48w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/04\/blog7.png 350w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><figcaption id=\"caption-attachment-8499\" class=\"wp-caption-text\">Planar vs. trench cell in an IGBT device<\/figcaption><\/figure>\n<figure id=\"attachment_8500\" aria-describedby=\"caption-attachment-8500\" style=\"width: 300px\" class=\"wp-caption aligncenter\"><img decoding=\"async\" class=\"wp-image-8500 size-medium\" src=\"\/wp-content\/uploads\/2020\/04\/blog8-300x189.png\" alt=\"\" width=\"300\" height=\"189\" srcset=\"https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/04\/blog8-300x189.png 300w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/04\/blog8-43x27.png 43w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/04\/blog8-63x40.png 63w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/04\/blog8-48x30.png 48w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/04\/blog8.png 375w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><figcaption id=\"caption-attachment-8500\" class=\"wp-caption-text\">Process simulation of key steps to fabricate a Split-Gate UMOSFET<\/figcaption><\/figure>\n<div class=\"post-content\" style=\"box-sizing: border-box; color: #0a0a0a; font-family: 'Open Sans', sans-serif; font-size: 14px; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400; letter-spacing: normal; orphans: 2; text-align: left; text-indent: 0px; text-transform: none; white-space: normal; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; background-color: #ffffff; text-decoration-style: initial; text-decoration-color: initial;\">\n<div class=\"entry-content\">\n<p>With optimized devices, engineers can produce better semiconductor products and reduce the time to reach volume production, by decreasing the number of prototype wafers that need to be manufactured and characterized. Another benefit for fabless product engineers, is the ability to suggest improvements in the manufacturing process to their chosen foundry to improve yield and performance.<\/p>\n<p>Typical device types for each kind of material are listed here:<\/p>\n<ul>\n<li>Silicon: LDMOS, IGBT, Bipolar, DMOSFET, Schottky Diode, Thyristor<\/li>\n<li>SiC \u2013 Diode, MOSFET, DMOSFET, IGBT<\/li>\n<li>GaN \u2013 Diode, Lateral HEMT, Vertical HEMT<\/li>\n<\/ul>\n<p>Silvaco TCAD process and device modeling solutions allows users to virtually prototype realistic devices in 2D or 3D, and explore device performance in DC, AC and transient simulations. Additionally, the capability to pair a physics-based TCAD device (or devices) with a surrounding SPICE circuit allows users to explore the performance of their devices in realistic circuits.<\/p>\n<p>To learn more about 2D\/3D Device simulation, Process simulation and Design Technology Co-Optimization to improve power electronics go to our new\u00a0<a href=\"\/solutions\/power\/\" target=\"_blank\" rel=\"noreferrer noopener\" aria-label=\"Power Solutions page. (opens in a new tab)\">Power Solutions page<\/a>, where you will find a new whitepaper and other resources.<\/p>\n<p>We also have an upcoming power electronics webinar by one of our technical experts, Dr. David Green:<\/p>\n<p><a href=\"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/sic-and-other-wide-bandgap-materials-from-process-to-device-simulation\/\"><strong>SiC and Other Wide Bandgap Materials: From Process to Device Simulation<\/strong><\/a><strong><br \/>\nOctober 31st 2019 | 10:00 am \u2013 11:00 am (PDT)<\/strong><\/p>\n<p>This webinar provides an overview of Silvaco\u2019s TCAD tools. It introduces Silvaco\u2019s process and device simulation capabilities for wide bandgap materials. In addition, various practical examples are demonstrated and discussed, such as SiC JBS diodes and GaN FETs.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"<p>The power electronics (PE) market is growing rapidly, driven by the accelerating demand of EV and HEV vehicles. Power devices lend themselves to design and manufacturing innovations at the transistor-level to improve device performance and reduce development and production costs. Silicon-carbide (SiC), gallium-nitride (GaN), and other wide bandgap materials have started to replace silicon in high-voltage power devices.<\/p>\n","protected":false},"author":5,"featured_media":20263,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[7745],"tags":[],"class_list":["post-35860","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-tcad-blogs-zh-hans","entry","has-media"],"_links":{"self":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/posts\/35860","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/users\/5"}],"replies":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/comments?post=35860"}],"version-history":[{"count":0,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/posts\/35860\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/media\/20263"}],"wp:attachment":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/media?parent=35860"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/categories?post=35860"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/tags?post=35860"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}