{"id":36206,"date":"2015-10-01T19:15:15","date_gmt":"2015-10-01T19:15:15","guid":{"rendered":"https:\/\/silvaco-stage.betagentechnologies.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/3d-tcad-mixed-mode-simulation-of-current-filaments-in-igbt-multicell-array-under-short-circuit-condition\/"},"modified":"2021-10-13T10:00:34","modified_gmt":"2021-10-13T17:00:34","slug":"3d-tcad-mixed-mode-simulation-of-current-filaments-in-igbt-multicell-array-under-short-circuit-condition","status":"publish","type":"post","link":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/3d-tcad-mixed-mode-simulation-of-current-filaments-in-igbt-multicell-array-under-short-circuit-condition\/","title":{"rendered":"3D TCAD Mixed-Mode Simulation of Current Filaments in IGBT Multicell Array under Short-Circuit Condition"},"content":{"rendered":"<h1>3D TCAD Mixed-Mode Simulation of Current Filaments in IGBT Multicell Array under Short-Circuit Condition<\/h1>\n<p><strong>Background<\/strong><\/p>\n<p>A power IGBT (Insulated Gate Bipolar Transistor) is conventionally made up of a repetitive array of homogenous IGBT cells. Such a homogenous configuration renders a uniform current flow across the active surface area of the IGBT chip when the IGBT is turned on. Under a short-circuit condition, however, the IGBT being turned on is exposed to a very high collector-to-emitter voltage. In this condition, the IGBT conducts a very high collector current, leading to correspondingly high power dissipation in the form of heat flowing uniformly across the chip. If the heating of the chip exceeds a critical level during a short-circuit operation, the device may fail or even get destroyed by local overheating in conjunction with the establishment of current filaments in a localized area, or the hot spots, within the device.<\/p>\n<p><strong>Modeling and Simulation<\/strong><\/p>\n<p>In cell mode of Victory Process an IGBT array consisting of 8 cells, as shown in Figure 1, is generated by joining 8 copies of the IGBT single cell together. This IGBT multicell array is uniform along its width of 40 \u00b5m. Each IGBT single cell is 20 \u00b5m long and features a 1.3 kV trench-gate design with a fieldstop layer (n-buffer) that consumes 16 \u00b5m out of the n-drift region thickness of 134 \u00a8\u00b5m. For the sake of convenience, the doping profiles of the cell structure are modeled with analytic functions.<\/p>\n<p><img loading=\"lazy\" width=\"782\" height=\"1012\" src=\"https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2015_a1.jpg\" class=\"cleaned-enfold-image\" alt=\"\" decoding=\"async\" loading=\"lazy\" srcset=\"https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2015_a1.jpg 782w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2015_a1-232x300.jpg 232w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2015_a1-768x994.jpg 768w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2015_a1-545x705.jpg 545w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2015_a1-29x37.jpg 29w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2015_a1-43x55.jpg 43w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2015_a1-37x48.jpg 37w\" sizes=\"auto, (max-width: 782px) 100vw, 782px\" \/><\/p>\n","protected":false},"excerpt":{"rendered":"<p>A power IGBT (Insulated Gate Bipolar Transistor) is conventionally made up of a repetitive array of homogenous IGBT cells. Such a homogenous configuration renders a uniform current flow across the active surface area of the IGBT chip when the IGBT is turned on. Under a short-circuit condition, however, the IGBT being turned on is exposed to a very high collector-to-emitter voltage. In this condition, the IGBT conducts a very high collector current, leading to correspondingly high power dissipation in the form of heat flowing uniformly across the chip. If the heating of the chip exceeds a critical level during a short-circuit operation, the device may fail or even get destroyed by local overheating in conjunction with the establishment of current filaments in a localized area, or the hot spots, within the device.<\/p>\n","protected":false},"author":5,"featured_media":19552,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[7723],"tags":[],"class_list":["post-36206","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard-zh-hans","entry","has-media"],"_links":{"self":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/posts\/36206","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/users\/5"}],"replies":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/comments?post=36206"}],"version-history":[{"count":1,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/posts\/36206\/revisions"}],"predecessor-version":[{"id":36211,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/posts\/36206\/revisions\/36211"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/media\/19552"}],"wp:attachment":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/media?parent=36206"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/categories?post=36206"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/tags?post=36206"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}