{"id":36700,"date":"2003-05-01T23:58:50","date_gmt":"2003-05-01T23:58:50","guid":{"rendered":"https:\/\/silvaco-stage.betagentechnologies.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/low-voltage-super-junction-mosfet-simulation-and-experimentation\/"},"modified":"2021-10-13T10:41:54","modified_gmt":"2021-10-13T17:41:54","slug":"low-voltage-super-junction-mosfet-simulation-and-experimentation","status":"publish","type":"post","link":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/low-voltage-super-junction-mosfet-simulation-and-experimentation\/","title":{"rendered":"Low Voltage Super Junction MOSFET Simulation and Experimentation"},"content":{"rendered":"<h1>Low Voltage Super Junction MOSFET Simulation and Experimentation<\/h1>\n<h3>Introduction<\/h3>\n<p>The application of Super Junction concepts to a low voltage power MOSFET is investigated. The body junction is modified with the addition of a high energy implant, resulting in an increased breakdown voltage. Simulations are used to quantify the relationship between dose and breakdown voltage, resulting in a predicted 35% Rds(on) reduction. This is confirmed through experiment, and a 19% reduction in Rds(on) is reported at 75 V. No change in device reliability is observed. This approach provides a simple means to reduce the on resistance of low voltage MOSFETs.<\/p>\n<p><img loading=\"lazy\" width=\"750\" height=\"1000\" src=\"https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_may_2003_a1-e1611191681909.jpg\" class=\"cleaned-enfold-image\" alt=\"\" decoding=\"async\" loading=\"lazy\" \/><\/p>\n","protected":false},"excerpt":{"rendered":"<p>The application of Super Junction concepts to a low voltage power MOSFET is investigated. The body junction is modified with the addition of a high energy implant, resulting in an increased breakdown voltage. Simulations are used to quantify the relationship between dose and breakdown voltage, resulting in a predicted 35% Rds(on) reduction. This is confirmed through experiment, and a 19% reduction in Rds(on) is reported at 75 V. No change in device reliability is observed. This approach provides a simple means to reduce the on resistance of low voltage MOSFETs.<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[7723],"tags":[],"class_list":["post-36700","post","type-post","status-publish","format-standard","hentry","category-simulation-standard-zh-hans","entry"],"_links":{"self":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/posts\/36700","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/comments?post=36700"}],"version-history":[{"count":1,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/posts\/36700\/revisions"}],"predecessor-version":[{"id":36705,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/posts\/36700\/revisions\/36705"}],"wp:attachment":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/media?parent=36700"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/categories?post=36700"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/tags?post=36700"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}