{"id":36776,"date":"2002-08-01T23:55:38","date_gmt":"2002-08-01T23:55:38","guid":{"rendered":"https:\/\/silvaco-stage.betagentechnologies.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/simulating-boron-diffusion-in-silicon-germanium\/"},"modified":"2026-09-14T09:22:16","modified_gmt":"2026-09-14T16:22:16","slug":"simulating-boron-diffusion-in-silicon-germanium","status":"publish","type":"post","link":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/simulating-boron-diffusion-in-silicon-germanium\/","title":{"rendered":"Simulating Boron Diffusion in Silicon Germanium"},"content":{"rendered":"<h1>Simulating Boron Diffusion in Silicon Germanium<\/h1>\n<h3>Introduction<\/h3>\n<p>The silicon germanium heterojunction bipolar transistor (SiGe HBT) is a promising technology for combining the operating speed of compound material devices with the production capability of bulk silicon. The presence of a narrower-bandgap material in the base region where most of the bandgap offset occurs in the valence band, creates an energy well for holes. With the lower energy barrier, a lower hole current density can be obtained for a given electron current density increasing the transistor\u2019s gain [1]. Thus the base can then be highly doped, greatly increasing high frequency performance whilst still retaining a reasonable gain. For this reason, the diffusion of boron in SiGe is of great interest.<\/p>\n<p><img loading=\"lazy\" width=\"1302\" height=\"1669\" src=\"https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_aug_2002_a1.jpg\" class=\"cleaned-enfold-image\" alt=\"\" decoding=\"async\" loading=\"lazy\" srcset=\"https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_aug_2002_a1.jpg 1302w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_aug_2002_a1-234x300.jpg 234w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_aug_2002_a1-804x1030.jpg 804w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_aug_2002_a1-768x984.jpg 768w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_aug_2002_a1-1198x1536.jpg 1198w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_aug_2002_a1-1170x1500.jpg 1170w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_aug_2002_a1-550x705.jpg 550w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_aug_2002_a1-29x37.jpg 29w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_aug_2002_a1-43x55.jpg 43w, https:\/\/silvaco-stage.betagentechnologies.com\/wp-content\/uploads\/simulationstandard\/simstd_aug_2002_a1-37x48.jpg 37w\" sizes=\"auto, (max-width: 1302px) 100vw, 1302px\" \/><\/p>\n","protected":false},"excerpt":{"rendered":"<p>The silicon germanium heterojunction bipolar transistor (SiGe HBT) is a promising technology for combining the operating speed of compound material devices with the production capability of bulk silicon. The presence of a narrower-bandgap material in the base region where most of the bandgap offset occurs in the valence band, creates an energy well for holes. With the lower energy barrier, a lower hole current density can be obtained for a given electron current density increasing the transistor\u2019s gain [1]. Thus the base can then be highly doped, greatly increasing high frequency performance whilst still retaining a reasonable gain. For this reason, the diffusion of boron in SiGe is of great interest.<\/p>\n","protected":false},"author":2,"featured_media":21607,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[7723],"tags":[],"class_list":["post-36776","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard-zh-hans","entry","has-media"],"_links":{"self":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/posts\/36776","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/comments?post=36776"}],"version-history":[{"count":2,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/posts\/36776\/revisions"}],"predecessor-version":[{"id":66782,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/posts\/36776\/revisions\/66782"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/media\/21607"}],"wp:attachment":[{"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/media?parent=36776"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/categories?post=36776"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/silvaco-stage.betagentechnologies.com\/zh-hans\/wp-json\/wp\/v2\/tags?post=36776"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}