[작성자:] Ingrid Schwarz

As process nodes continue to shrink, the requirement for additional physics is gradually creeping into each stage of the design process. By way of illustration, TCAD simulations are becoming more atomistic in nature, SPICE models are becoming process-aware to take account of localized strain effects, and back or middle end of line (BEOL and MEOL) parasitics are moving from exclusively 2D rule based solutions to full 3D structure field solvers for numerous critical sections of the layout.

The previously standalone Stellar GUI based field solver tool for parasitic extraction is now integrated into Hipex (Silvaco’s full chip extraction tool) in Expert GUI. In Hipex, user can choose proper extraction method (including Steller solver) among different approaches. The GUI of Expert (Silvaco’s layout editor) has been extended to provide technology setup for Stellar mode of Hipex. Also, Expert provides full functional features of GDS drawing, editing and rule checking. As opposed to the Clever field solver based on adaptive meshing, Stellar can handle very large layout size with less memory and reduced runtime with acceptable accuracy (as compared to Clever). Clever, as very accurate adaptive meshing field solver, can be used as reference accuracy check when Stellar or rule based parasitic extraction method is performed in Hipex. In this article, we will review the basic interface of Hipex in Expert GUI using Stellar as a field solver to extract capacitance in touch panel example.

We have demonstrated in previous articles the static electrical and optical simulation of LC cells [1][2]. The last piece of the function for a comprehensive analysis of an LC pixel is the capability of performing transient simulation. In this article, we will show the dynamic calculation of the LC director and the combination of electrical and optical simulation.

OBJECTIVE Add an impurity (H) to a material (silicon) for a diffusion model (Fermi). The description below refers to Victory Process version 7.27.X.