Reproducing Basic Experiments in ATLAS to Study the Transient Decay of Carriers

Introduction

ATLAS may be used to study these effects. A standard experiment for studying recombination in silicon is the transient decay of photoexcited carriers – known as the Stephenson-Keyes method for measuring minority carrier lifetime [1]. This method has been well described in [2]. The following is a description of the implementation of this experiment using the 2D device simulator ATLAS.